PART |
Description |
Maker |
2SK2885 2SK2882 |
SILICON N-CHANNEL MOS TYPE N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND AND MOTOR DRIVE APPLICATIONS)
|
Toshiba Semiconductor
|
SSM3J02F |
600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
2SJ353 2SJ353-T D11216EJ1V0DS00 |
From old datasheet system P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING P-channel MOS-type silicon field effect transistor (-60
|
NEC[NEC]
|
UPA1950 UPA1950TE UPA1950TE-T2 UPA1950TE-T1 |
2.5 A, 12 V, 0.205 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING Pch enhancement-type MOS FET
|
NEC[NEC]
|
2SJ200 |
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
GT40T101 |
N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS)
|
Toshiba Semiconductor
|
2SK349706 2SK3497 |
Silicon N Channel MOS Type High Power Amplifier Application
|
Toshiba Semiconductor
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
GT60M303 EE07978 |
N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS) From old datasheet system
|
Toshiba Semiconductor
|
APT6010B2LL APT6010LLL APT6010LLLG APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 MOSFET
|
Microsemi Corporation
|
2SJ200 |
Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application
|
TOSHIBA
|